SiC Rectifiers

STMicroelectronics' silicon carbide structured Schottky diodes' switching enables designers to reach a higher level of efficiency and power density. Covering current ratings from 2 A to 40 A, ST’s 650 V and 1200 V SiC diode families include industrial-dedicated as well as automotive-qualified AEC-Q101 devices in surface-mount DPAK HV (high-voltage) and D²PAK, or through-hole TO-220AC and TO-247LL (long-lead) packages.

ST’s range of 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes meets designers' needs for superior efficiency, low weight, small size, and improved thermal characteristics for performance-oriented applications.

Offering excellent forward voltage (low V_F) and state-of-the-art robustness, ST’s 1200 V SiC diodes provide extra freedom to achieve high efficiency and reliability with a lower current rating and, therefore, lower cost, while reducing operating temperature and extending application lifetime. They ensure a perfect fit in every switch-mode converter and inverter where extreme power density and efficiency are needed, such as SMPS, UPS, solar, and motor drives.

Covering current ratings-from 2 A to 40 A, ST’s 1200 V SiC diode family includes industrial-dedicated as well as automotive-qualified AEC-Q101 devices in surface-mount DPAK HV (high-voltage) and D²PAK, or through-hole TO-220AC and TO-247LL (long-lead) packages.

ST's 1200 V SiC allows reaching high standards and small form factor.