STPOWER SiC MOSFETs

STMicroelectronics' STPOWER SiC MOSFETs bring the advanced efficiency and reliability of wide bandgap materials to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. With an extended voltage range from 650 V to 1700 V, these MOSFETs feature excellent switching performance combined with very low on-state resistance R_DS(ON) per area figure of merit. ST SiC MOSFETs allow the design of more efficient and compact systems than ever. ST’s 1200 V SiC MOSFETS exhibit an outstanding temperature rating of +200°C for improved thermal design of power electronics systems. Compared to silicon MOSFETs, SiC MOSFETs also feature significantly reduced switching losses with minimal variation versus the temperature.

ST’s advanced and innovative 3rd generation SiC MOSFET technology features a very low R_DS(ON) over the entire temperature range combined with low capacitances and very high switching operations. This improves application performance in frequency, energy efficiency, system size, and weight reduction.

Key Features

• Automotive-grade (AG) qualified devices
• Very high-temperature handling capability (max. T_J = +200°C)
• Very low switching losses (minimal variation versus temperature) allowing to operate at very high switching frequency
• Low on-state resistance over the temperature range
• Simple to drive
• Very fast and robust intrinsic body diode proved