STMicroelectronics

STPOWER SiC MOSFETs

STMicroelectronics' state-of-the-art MOSFET packages are specifically designed for automotive and industrial applications

Image of STMicro STPOWER SiC MOSFETsSTMicroelectronics' STPOWER SiC MOSFETs bring the advanced efficiency and reliability of wide bandgap materials to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. With an extended voltage range from 650 V to 1700 V, these MOSFETs feature excellent switching performance combined with very low on-state resistance RDS(ON) per area figure of merit. ST SiC MOSFETs allow the design of more efficient and compact systems than ever. ST’s 1200 V SiC MOSFETS exhibit an outstanding temperature rating of +200°C for improved thermal design of power electronics systems. Compared to silicon MOSFETs, SiC MOSFETs also feature significantly reduced switching losses with minimal variation versus the temperature.

ST’s advanced and innovative 3rd generation SiC MOSFET technology features a very low RDS(ON) over the entire temperature range combined with low capacitances and very high switching operations. This improves application performance in frequency, energy efficiency, system size, and weight reduction.

Key Features

  • Automotive-grade (AG) qualified devices
  • Very high-temperature handling capability (max. TJ = +200°C)
  • Very low switching losses (minimal variation versus temperature) allowing to operate at very high switching frequency
  • Low on-state resistance over the temperature range
  • Simple to drive
  • Very fast and robust intrinsic body diode proved

Gen 3

ObrázekObjednací číslo výrobcePopisAvailable QuantityCenaZobrazit podrobnosti
SILICON CARBIDE POWER MOSFET 650SCT055TO65G3SILICON CARBIDE POWER MOSFET 65084 - Immediate$178.30Zobrazit podrobnosti
AUTOMOTIVE-GRADE SILICON CARBIDESCT040W65G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE29 - Immediate$273.08Zobrazit podrobnosti
AUTOMOTIVE-GRADE SILICON CARBIDESCT025H120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE1000 - Immediate$357.44Zobrazit podrobnosti
AUTOMOTIVE-GRADE SILICON CARBIDESCT040HU65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE510 - Immediate$292.45Zobrazit podrobnosti
AUTOMOTIVE-GRADE SILICON CARBIDESCT055HU65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE436 - Immediate$291.20Zobrazit podrobnosti

Gen 2

ObrázekObjednací číslo výrobcePopisAvailable QuantityCena
SICFET N-CH 1200V 33A HIP247SCTW40N120G2VAGSICFET N-CH 1200V 33A HIP247396 - Immediate$358.28Zobrazit podrobnosti
SILICON CARBIDE POWER MOSFET 120SCTWA60N120G2-4SILICON CARBIDE POWER MOSFET 120231 - Immediate$368.07Zobrazit podrobnosti
SICFET N-CH 650V 100A HIP247SCTW100N65G2AGSICFET N-CH 650V 100A HIP247491 - Immediate$590.32Zobrazit podrobnosti
SICFET N-CH 650V 90A H2PAK-7SCTH90N65G2V-7SICFET N-CH 650V 90A H2PAK-732 - Immediate$570.53Zobrazit podrobnosti
TRANS SJT N-CH 1200V 91A HIP247SCTW70N120G2VTRANS SJT N-CH 1200V 91A HIP247428 - Immediate$678.02Zobrazit podrobnosti

Gen 1

ObrázekObjednací číslo výrobcePopisAvailable QuantityCenaZobrazit podrobnosti
SICFET N-CH 1200V 20A H2PAK-2SCT20N120HSICFET N-CH 1200V 20A H2PAK-20 - Immediate$192.89Zobrazit podrobnosti
HIP247 IN LINESCT1000N170HIP247 IN LINE205 - Immediate$184.97Zobrazit podrobnosti
SICFET N-CH 1200V 12A HIP247SCT10N120SICFET N-CH 1200V 12A HIP247125 - Immediate$187.26Zobrazit podrobnosti
SICFET N-CH 1200V 65A HIP247SCT50N120SICFET N-CH 1200V 65A HIP247295 - Immediate$571.37Zobrazit podrobnosti
SICFET N-CH 1200V 12A HIP247SCT10N120AGSICFET N-CH 1200V 12A HIP247527 - Immediate$191.64Zobrazit podrobnosti
Updated: 2024-11-22
Published: 2015-02-19

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