Silicon Carbide CoolSiC™ MOSFETs and Diodes

Infineon's CoolSiC Schottky diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid models, CoolSiC MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving silicon carbide devices.

The Infineon portfolio of SiC Schottky products covers 600 V and 650 V to 1200 V Schottky diodes. The combination of a fast silicon-based switch with a CoolSiC Schottky diode is often termed a hybrid solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products such as solar and UPS. CoolSiC MOSFETs are built on a state-of-the-art trench concept that sets a benchmark, allowing for both low losses in the application and high reliability in operation.