Nastavení
Rychlé dodání
Dodávka zdarma
Incoterms
Typy plateb
Produkt služby Marketplace
TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs
Transphorm’s JEDEC-qualified Gen IV FETs are offered in TO-247 and PQFN packages
Transphorm’s 650 V SuperGaN™ Gen IV FETs include two robust JEDEC-qualified devices. The TP65H035G4WS offers a typical on-resistance of 35 mΩ in a TO-247 package. The TP65H300G4LSG offers a typical on-resistance of 240 mΩ in a PQFN88 package. Power systems using SuperGaN FETs can reach greater than 99% efficiency when used with bridgeless totem-pole power factor correction (PFC). Benefits include an improved figure of merit of ~10%; enhanced inrush current capabilities; and easier designability given switching node snubbers at high operation currents are no longer required.
TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs
| Obrázek | Objednací číslo výrobce | Popis | Trvalý odtokový proud (Id) při 25°C | Rds zap (max) při Id, Vgs | Vgs(th) (max) při Id | Available Quantity | Cena | Zobrazit podrobnosti | |
|---|---|---|---|---|---|---|---|---|---|
 |  | TP65H035G4WS | GANFET N-CH 650V 46.5A TO247-3 | 46,5A (Tc) | 41mOhm při 30A, 10V | 4,8V při 1mA | 626 - Immediate | $395.56 | Zobrazit podrobnosti |
|  | TP65H300G4LSG-TR | GANFET N-CH 650V 6.5A 3PQFN | 6,5A (Tc) | 312mOhm při 5A, 8V | 2,6V při 500µA | 0 - Immediate | See Page for Pricing | Zobrazit podrobnosti |
Published: 2020-07-28
Česká republika