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900 V Silicon Carbide (EliteSiC) MOSFETs
onsemi MOSFETs provide high-efficiency, increased power density, and reduced system size
onsemi 900 V EliteSiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
- 900 V rated
- Low ON resistance
- Compact chip size ensures low capacitance and gate charge
- High-speed switching and low capacitance
- 100% UIL tested
- Qualified for automotive according to AEC-Q101
Applications
- PFC
- OBC
- Boost inverters
- PV charging
- Automotive DC/DC converters for EV/PHEV
- Automotive onboard chargers
- Automotive auxiliary motor drives
- Network power supplies
- Server power supplies
Other Wide Bandgap Solutions
| Obrázek | Objednací číslo výrobce | Popis | Available Quantity | Cena | Zobrazit podrobnosti | |
|---|---|---|---|---|---|---|
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|  | FFSD08120A | DIODE SIC 1.2KV 22.5A TO252AA | 2338 - Immediate 2500 - Factory Stock | $138.09 | Zobrazit podrobnosti |
|  | NCD57001DWR2G | DGTL ISO 5KV 1CH GATE DVR 16SOIC | 1228 - Immediate | $128.19 | Zobrazit podrobnosti |
|  | NCP51705MNTXG | IC GATE DRVR LOW-SIDE 24QFN | 861 - Immediate 114000 - Factory Stock | $120.41 | Zobrazit podrobnosti |
|  | FFSB0665B | DIODE SIL CARBIDE 650V 8A TO263 | 627 - Immediate | $63.36 | Zobrazit podrobnosti |
|  | NDSH25170A | DIODE SIL CARB 1700V 25A TO2472 | 0 - Immediate | $369.22 | Zobrazit podrobnosti |
Published: 2020-04-14
Česká republika