EPC9048: 12A, 0 ~ 160V, Half H-Bridge

The EPC9048 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2034 eGaN field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The development board is 2" x 1.5" and contains two eGaN FETs in a half bridge configuration using the Texas Instruments UCC27611 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

For more information on the EPC2034 eGaN FET, please refer to the datasheet which should be read in conjunction with the quick start guide.