EPC9039: 17A Half H-bridge, 0 ~ 80V

These development boards are in a monolithic half bridge topology with onboard gate drives, featuring the EPC2102/3/4 eGaNICs (Enhancement-mode Gallium Nitride Integrated Circuits). The purpose of these development boards is to simplify the evaluation process of these monolithically integrated eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The development board is 2” x 2” and contains one eGaNIC in half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance and has additional area to add buck output filter components on board. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

For more information on the EPC2102/3/4 eGaNIC, please refer to the datasheets. The datasheet should be read in conjunction with this quick start guide. GaN