Slide 1 Slide 2 Slide 3 Slide 4 Slide 5 Slide 6 Slide 7 Slide 8 Slide 9 Slide 10 Slide 11 Slide 12 Slide 13 Slide 14 Slide 15 Slide 16 Slide 17 Slide 18 Product List
Silicon Carbide Rectifiers Slide 4

Silicon-carbide has a much higher critical electric field. Shown here is a comparison of the electric field of silicon-carbide versus other Silicon products. Essentially, less thickness and less resistivity are required to sustain the same breakdown voltage as silicon. As a result, it is possible to design diodes with a much higher breakdown voltage for the same thickness. Schottky diodes are limited to around 200 V. In contrast, silicon-carbide structures are devices that are easily available up to 1200 V with a possibility of structures up to 1700 V.

PTM Published on: 2014-09-30