eGaN FETs for DC-DC Conversion

eGan® FETs for DC-DC Conversion

EPC

This tutorial will discuss some of the key eGaN FET characteristics and the advantages offered by converters designed using EPC’s eGaN power FETs. Also, this presentation will discuss eGaN FET performance in high frequency 12V-1V DC-DC converters, 24V-1V DC-DC converters, and how the use of eGaN power FETs from EPC has made a 48V-1V converter practical for the first time. 

 

Related Parts

ObrázekObjednací číslo výrobcePopisFunkceVestavěnýPoužitý IO/součástAvailable QuantityCenaZobrazit podrobnosti
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015Polomůstkový H řadič (Vnější FET)NeEPC20150 - Immediate$1,874.70Zobrazit podrobnosti
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001Polomůstkový H řadič (Vnější FET)NeEPC20010 - Immediate$2,473.56Zobrazit podrobnosti
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007Polomůstkový H řadič (Vnější FET)NeEPC80070 - Immediate$2,994.31Zobrazit podrobnosti
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001Polomůstkový H řadič (Vnější FET)NeEPC20010 - Immediate$1,874.70Zobrazit podrobnosti
PTM Published on: 2010-01-22

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High-Step-Down-Ratio Buck Converters for Intermediate Bus Architectures Solutions for the design challenges of high-step-down-ratio DC/DC buck converters including Silicon & eGan FETs.

Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.