eGan Power Transistors

Driving eGaN® Power Transistors

EPC

This tutorial covers the advantages of EPC’s enhancement mode gallium nitride transistors. Explored in this module will be how to drive eGaN transistors in order to take advantage of those improvements in actual design circuits. To best understand the differences of an eGaN-specific gate drive and a generic MOSFET driver, the characteristics an “ideal” eGaN gate drive will have to be taken into consideration.

Related Parts

ObrázekObjednací číslo výrobcePopisFunkceVestavěnýPoužitý IO/součástAvailable QuantityCenaZobrazit podrobnosti
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015Polomůstkový H řadič (Vnější FET)NeEPC20150 - Immediate$1,874.70Zobrazit podrobnosti
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001Polomůstkový H řadič (Vnější FET)NeEPC20010 - Immediate$2,473.56Zobrazit podrobnosti
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007Polomůstkový H řadič (Vnější FET)NeEPC80070 - Immediate$2,994.31Zobrazit podrobnosti
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001Polomůstkový H řadič (Vnější FET)NeEPC20010 - Immediate$1,874.70Zobrazit podrobnosti
PTM Published on: 2010-10-11

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.
eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.