eGaN Basics

eGaN® Basics

EPC

This tutorial covers the basics of EPC’s enhancement mode gallium nitride (eGaN®) transistors. EPC’s eGaN® transistors give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. These advantages can be applied to gain efficiency advantages, size advantages, or a combination of both.

Related Parts

ObrázekObjednací číslo výrobcePopisFunkceVestavěnýPoužitý IO/součástAvailable QuantityCenaZobrazit podrobnosti
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015Polomůstkový H řadič (Vnější FET)NeEPC20150 - Immediate$1,894.50Zobrazit podrobnosti
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001Polomůstkový H řadič (Vnější FET)NeEPC20010 - Immediate$2,499.69Zobrazit podrobnosti
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007Polomůstkový H řadič (Vnější FET)NeEPC80070 - Immediate$3,025.94Zobrazit podrobnosti
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001Polomůstkový H řadič (Vnější FET)NeEPC20010 - Immediate$1,894.50Zobrazit podrobnosti
PTM Published on: 2010-09-27

Related Articles and Blogs

Power GaN Products and Resources Available at DigiKey GaN is making inroads into power design. This blog provides some background and some relevant GaN products and resources now available at DigiKey.
High-Step-Down-Ratio Buck Converters for Intermediate Bus Architectures Solutions for the design challenges of high-step-down-ratio DC/DC buck converters including Silicon & eGan FETs.

Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.