VS-SF50xA120/VS-SFxx0SA120 Power Modules

Vishay Semiconductor Diodes power modules are designed with SiC technology to increase power efficiency in existing medium- to high-frequency designs

Image of Vishay Semi Diodes 1,200 V SiC MOSFET Power ModulesVishay Semiconductor Diodes VS-SF50xA120 and VS-SFxx0SA120 power modules are designed to increase power efficiency for medium- to high-frequency applications. They are offered in single-switch and low-side chopper configurations. Each power module features a SiC MOSFET integrated with a soft-body diode offering low-reverse recovery. The result is reduced switching losses and increased efficiency. The compact SOT-227 package allows them to serve as drop-in replacements for competing solutions in existing designs, enabling designers to adopt a SiC technology without the expense of changing PCB layouts. The molded package also offers electrical insulation up to 2,500 V for one minute, lowering costs by eliminating the need for additional insulation between the component and heatsink.

Features
  • Industry-standard SOT-227 package
  • Offered in single-switch and low-side chopper configurations
  • Integrate
    • SiC MOSFETs
    • Soft body diode offering low-reverse recovery
  • Electrical insulation up to 2,500 V for one minute
 
  • Continuous drain current from 50 A to 200 A
  • Low on-resistance down to 12.1 mΩ
  • High-speed switching with low capacitance
  • Maximum operating junction temperature of +175°C
  • RoHS compliant
Applications
  • Solar inverters
  • Off-board chargers for electric vehicles (EV)
  • SMPS
  • DC/DC converters
 
  • UPS
  • HVAC systems
  • Large-scale battery storage systems
  • Telecom power supplies

VS-SF50xA120 and VS-SFxx0SA120 Power Modules

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Published: 2026-01-29