DTMOS-VI 600 V and 650 V Power MOSFETs

Product Highlights > DTMOS-VI 600 V and 650 V Power MOSFETs

Toshiba Electronic Devices and Storage Corporation

            DTMOS-VI 600 V and 650 V Power MOSFETs
                    Toshiba DTMOS-VI super junction MOSFETs are designed for switching applications
    

The latest Toshiba DTMOS-VI process offers 600 V and 650 V MOSFETs by utilizing a powerful super junction process with a robust or faster body diode to improve efficiency in critical switching applications such as power supplies, data centers, and solar inverters.

These products, employing the DTMOS-VI (HSD) process, utilize high-speed body diodes to enhance the reverse recovery characteristics, which are crucial for bridge circuit and inverter circuit applications. Against the standard DTMOS-VI process, they achieve a 65% reduction in reverse recovery time (t_rr), and an 88% reduction in reverse recovery charge (Q_rr) (measurement conditions: -dIDR/dt=100 A/μs).

Both DTMOS-VI processes are available in a variety of packages, including standard through-hole TO-220 and TO-247 Packages, as well as surface mount options such as TOLL or DFN8x8.

Features

Lowest on-resistance in family is 0.024 Ω (max) (V_GS=10 V)
Low R_DS(ON) x Q_gd (drain-source on-resistance x gate-drain charge)
High efficiency in switched-mode power supplies

Tight threshold voltage for reliable operation
Built-in high-speed diode offers improved reverse recovery loss

Applications

Industrial equipment
Switching power supplies (data center servers, communications equipment, and more)
EV charging stations
Power conditioners for photovoltaic generators
Uninterruptible power systems

Diagram (Click to Enlarge)

DTMOS-VI 600 V and 650 V Power MOSFETs

Objednací číslo výrobce	Popis	Napětí mezi odtokem a zdrojem (Vdss)	Trvalý odtokový proud (Id) při 25°C	Available Quantity	Cena	Zobrazit podrobnosti
TK155U60Z1,RQ	N-CH MOSFET, 600 V, 0.155 @10V,	600 V	17A (Ta)	4000 - Immediate	$72.83	Zobrazit podrobnosti
TK125U60Z1,RQ	N-CH MOSFET, 600 V, 0.125 @10V,	600 V	20A (Ta)	4000 - Immediate	$80.62	Zobrazit podrobnosti
TK099U60Z1,RQ	N-CH MOSFET, 600 V, 0.099 @10V,	600 V	25A (Ta)	4000 - Immediate	$93.04	Zobrazit podrobnosti
TK080U60Z1,RQ	N-CH MOSFET, 600 V, 0.08 @10V, T	600 V	30A (Ta)	4000 - Immediate	$106.51	Zobrazit podrobnosti
TK115U65Z5,RQ	N-CH MOSFET, 650 V, 0.115 @10V,	650 V	24A (Ta)	4000 - Immediate	$130.30	Zobrazit podrobnosti
TK095U65Z5,RQ	N-CH MOSFET, 650 V, 0.095 @10V,	650 V	29A (Ta)	4000 - Immediate	$147.56	Zobrazit podrobnosti
TK024N60Z1,S1F	N-CH MOSFET 600V 0.024OHM 10V	600 V	80A (Ta)	104 - Immediate	$322.70	Zobrazit podrobnosti
TK065U65Z,RQ	DTMOS VI TOLL PD=270W F=1MHZ	650 V	38A (Ta)	1676 - Immediate	$186.92	Zobrazit podrobnosti
TK110U65Z,RQ	DTMOS VI TOLL PD=190W F=1MHZ	650 V	24A (Ta)	5932 - Immediate	$134.09	Zobrazit podrobnosti
TK125V65Z,LQ	MOSFET N-CH 650V 24A 5DFN	650 V	24A (Ta)	9890 - Immediate	$142.09	Zobrazit podrobnosti
TK099V65Z,LQ	MOSFET N-CH 650V 30A 5DFN	650 V	30A (Ta)	4730 - Immediate	$155.35	Zobrazit podrobnosti
TK090U65Z,RQ	DTMOS VI TOLL PD=230W F=1MHZ	650 V	30A (Ta)	0 - Immediate	$155.14	Zobrazit podrobnosti
TK190U65Z,RQ	DTMOS VI TOLL PD=130W F=1MHZ	650 V	15A (Ta)	1008 - Immediate	$96.83	Zobrazit podrobnosti
TK170V65Z,LQ	MOSFET N-CH 650V 18A 5DFN	650 V	18A (Ta)	4938 - Immediate	$114.72	Zobrazit podrobnosti
TK210V65Z,LQ	MOSFET N-CH 650V 15A 5DFN	650 V	15A (Ta)	4616 - Immediate	$103.78	Zobrazit podrobnosti
TK095N65Z5,S1F	650V DTMOS6-HIGH SPEED DIODE	650 V	29A (Ta)	195 - Immediate	$168.61	Zobrazit podrobnosti
TK068N65Z5,S1F	650V DTMOS6-HSD TO-247 68MOHM	650 V	37A (Ta)	235 - Immediate	$216.82	Zobrazit podrobnosti
TK042N65Z5,S1F	650V DTMOS6 HSD 42MOHM TO-247	650 V	55A (Ta)	63 - Immediate	$291.33	Zobrazit podrobnosti
TK065N65Z,S1F	MOSFET N-CH 650V 38A TO247	650 V	38A (Ta)	33 - Immediate	$198.92	Zobrazit podrobnosti
TK110A65Z,S4X	MOSFET N-CH 650V 24A TO220SIS	650 V	24A (Ta)	27 - Immediate	$123.56	Zobrazit podrobnosti