Nastavení
Rychlé dodání
Dodávka zdarma
Incoterms
Typy plateb
Produkt služby Marketplace
Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series
Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series
Littelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.
State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects
| Features | ||
|
|
|
| Applications | ||
|
|
Silicon Carbide (SiC) Ultra-Fast Switching MOSFET
| Obrázek | Objednací číslo výrobce | Popis | Napětí mezi odtokem a zdrojem (Vdss) | Trvalý odtokový proud (Id) při 25°C | Available Quantity | Cena | Zobrazit podrobnosti | |
|---|---|---|---|---|---|---|---|---|
 |  | LSIC1MO120E0080 | SICFET N-CH 1200V 39A TO247-3 | 1200 V | 39A (Tc) | 369 - Immediate | $378.06 | Zobrazit podrobnosti |
| LSIC1MO120E0120 | SICFET N-CH 1200V 27A TO247-3 | 1200 V | 27A (Tc) | 0 - Immediate | See Page for Pricing | Zobrazit podrobnosti | |
| | LSIC1MO120E0160 | SICFET N-CH 1200V 22A TO247-3 | 1200 V | 22A (Tc) | 2227 - Immediate 1350 - Factory Stock | $260.17 | Zobrazit podrobnosti |
Published: 2018-01-05
Česká republika