LMG3522R030 GaN FET

Texas Instruments' LMG3522R030 GaN FET features an integrated driver and protections that target switch-mode power converters and enable designers to achieve levels of power density and efficiency. The power IC integrates a silicon driver that enables switching speeds up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low inductance package, delivers clean switching and minimal ringing in hard-switching power-supply topologies.

The adjustable gate drive strength allows control of the slew rate (20 V/ns to 150 V/ns), which can actively control EMI and optimize switching performance. The advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty-cycle PWM output, which simplifies the managing of device loading. Faults that have been reported include overtemperature, overcurrent, and undervoltage lock-out (UVLO) monitoring.