1200 V SiC Schottky Diodes for Next-Generation Power Designs

Taiwan Semiconductor (TSC) 1200 V wide bandgap SiC Schottky diode series offers next-level efficiency and reliability for modern power conversion systems. Leveraging advanced Merged PIN Schottky (MPS) technology, these SiC diodes deliver ultra-low reverse leakage, fast switching, and superior surge handling ideal for EV fast-charging infrastructure, industrial telecom power, and energy storage systems.

Designed for design flexibility and space-sensitive layouts, 1 A and 2 A versions come in compact SOD-128 and SMB packages, featuring improved creepage distances for enhanced electrical isolation. For higher current applications, the portfolio includes TO-247-3L devices rated up to 40 A, supporting scalable power design requirements. All components are AEC-Q101 qualified and rated up to +175°C junction temperature (T_J), ensuring long-term thermal and electrical stability.

With a positive temperature coefficient and the inherent benefits of wide bandgap semiconductor materials, these SiC Schottky rectifiers simplify thermal management and enable more compact, energy-efficient system designs. The TSC SiC diode series meets the growing demand for reliable, high-performance power electronics in next-generation applications.