TagoreTech

TP44200NM GaN FET with Integrated Driver

Tagore's GaN FET features an integrated driver for converters, chargers, motor drive, and general power applications

Image of Tagore's TP44200NM GaN FET with Integrated DriverTagore's TP44200NM is a monolithic integration of GaN FET and driver. The 180 mΩ, 650 V GaN HEMT device features an integrated driver circuit. Monolithic integration of a driver minimizes inductance in the gate loop enabling safe and clean switching even in high-voltage, high-frequency operations, making applications more efficient and reliable and reducing the size of magnetic components. The UVLO function turns off the HEMT in case the VDD voltage droops below its threshold voltage. A proprietary dv/dt protection circuit protects the HEMT from drain-source dv/dt-induced false turn-on even in the absence of VDD supply. An external resistance between VREG and RG allows control of the drain voltage slew rate for best EMI performance.

Features
  • UVLO protection
  • Zero reverse recovery
  • dv/dt immunity both with and without driver-supply
  • Low propagation delay for up to 2 MHz operation
  • Thermal pad (LV) isolated from the source for better thermal connection, even with sense resistors
  • Adjustable turn-on slew rate
  • 5 V PWM input
Applications
  • AC/DC, DC/DC, and DC/AC converters
  • LEDs and motor drives
  • Server power supplies
  • High-frequency LLC converters
  • Mobile chargers and laptop adapters
  • PFC applications (totem-pole and standard)
  • General single FET switching or in half-bridge pairs
Published: 2024-01-09