onsemi

Silicon Carbide (SiC) Cascode JFETs

ONSemi JFETs are available in both through-hole and surface mount packages

Image of ONSemi SiC Cascode JFETs ONSemi high-performance SiC cascode JFETs deliver excellent switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS(ON)) starting at just 5 mΩ, utilizing less than half the die size of any other technology. The JFETs are available in both standard through-hole (including Kelvin) and surface mount packages, offering excellent cost-effectiveness. These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si MOSFET. This innovative approach enables standard gate drive (0 to 12 V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.

Features
  • Ultra-low RDS(ON)
  • Maximum operating temperature: +175°C
  • Excellent reverse recover
  • Low gate charge
Applications
  • EV charging
  • PV inverters
  • Power factor correction units
  • Motor drives
  • Induction heating

Silicon Carbide (SiC) Cascode JFETs

ObrázekObjednací číslo výrobcePopisAvailable QuantityCenaZobrazit podrobnosti
SICFET N-CH 1200V 7.6A D2PAK-7UF3C120400B7SSICFET N-CH 1200V 7.6A D2PAK-71924 - Immediate$180.18Zobrazit podrobnosti
SICFET N-CH 1700V 7.6A D2PAK-7UF3C170400B7SSICFET N-CH 1700V 7.6A D2PAK-75300 - Immediate$221.42Zobrazit podrobnosti
SICFET N-CH 750V 28A TO247-3UJ4C075060K3SSICFET N-CH 750V 28A TO247-314954 - Immediate$266.42Zobrazit podrobnosti
SICFET N-CH 750V 28A TO247-4UJ4C075060K4SSICFET N-CH 750V 28A TO247-4531 - Immediate$278.08Zobrazit podrobnosti
1200V/70MOHM, SIC, FAST CASCODE,UF4C120070K3S1200V/70MOHM, SIC, FAST CASCODE,682 - Immediate$292.04Zobrazit podrobnosti
MOSFET N-CH 650V 54A TO247-3UF3C065040K3SMOSFET N-CH 650V 54A TO247-31190 - Immediate$368.27Zobrazit podrobnosti
750V/44MOHM, SIC, CASCODE, G4, TUJ4C075044K4S750V/44MOHM, SIC, CASCODE, G4, T495 - Immediate$309.12Zobrazit podrobnosti
750V/33MOHM, SIC, CASCODE, G4, TUJ4C075033K4S750V/33MOHM, SIC, CASCODE, G4, T2996 - Immediate$334.53Zobrazit podrobnosti
750V/23MOHM, SIC, CASCODE, G4, TUJ4C075023K4S750V/23MOHM, SIC, CASCODE, G4, T1054 - Immediate$383.90Zobrazit podrobnosti
SICFET N-CH 1200V 28.8A D2PAK-7UF3C120080B7SSICFET N-CH 1200V 28.8A D2PAK-71481 - Immediate$374.32Zobrazit podrobnosti
SICFET N-CH 1200V 33A TO247-3UJ3C120080K3SSICFET N-CH 1200V 33A TO247-34001 - Immediate$412.23Zobrazit podrobnosti
SICFET N-CH 750V 81A TO247-3UJ4C075018K3SSICFET N-CH 750V 81A TO247-35066 - Immediate$413.48Zobrazit podrobnosti
MOSFET N-CH 650V 65A TO263UJ3C065030B3MOSFET N-CH 650V 65A TO2633703 - Immediate$471.59Zobrazit podrobnosti
MOSFET N-CH 650V 85A TO247-3UJ3C065030K3SMOSFET N-CH 650V 85A TO247-32470 - Immediate$464.93Zobrazit podrobnosti
SICFET N-CH 750V 53A TOLLUJ4SC075018L8SSICFET N-CH 750V 53A TOLL1540 - Immediate$458.05Zobrazit podrobnosti
750V/18MOHM, N-OFF SIC STACK CASUJ4SC075018B7S750V/18MOHM, N-OFF SIC STACK CAS1113 - Immediate$481.17Zobrazit podrobnosti
MOSFET N-CH 650V 65A TO263UF3C065030B3MOSFET N-CH 650V 65A TO2632692 - Immediate$492.00Zobrazit podrobnosti
SICFET N-CH 750V 81A TO247-4UJ4C075018K4SSICFET N-CH 750V 81A TO247-4903 - Immediate$495.34Zobrazit podrobnosti
MOSFET N-CH 650V 85A TO220-3UJ3C065030T3SMOSFET N-CH 650V 85A TO220-3945 - Immediate$499.50Zobrazit podrobnosti
SICFET N-CH 1200V 65A TO247-4UF3C120040K4SSICFET N-CH 1200V 65A TO247-4567 - Immediate$577.62Zobrazit podrobnosti
Published: 2025-07-25

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Gen 4 1200 V SiC FETs for 800 V Bus Applications onsemi UF4C/SC Generation 4 SiC FET series is based on a unique cascode configuration, rated at 1200 V, and available in 23 mΩ to 70 mΩ options.
Gen 4 750 V SiC FETs Help Deliver Next-Generation Power Designs onsemi Generation 4 SiC FET is rated at 750 V while delivering figures of merit that lower conduction losses and increase efficiency at higher speed.
UF3SC SiC FETs with <10 mΩ RDS(on) onsemi UF3SC SiC FETs with RDS(on) values of 7 mΩ at 650 V and 9 mΩ at 1200 V feature industry-standard TO247 3- and 4-lead kelvin packages.

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