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Split-Gate Technology MOSFETs
MCC’s split-gate technology MOSFETs are suitable for space-saving and high-efficiency requirements in applications
Micro Commercial Components' split-gate technology MOSFETs offer extremely low RDS(on) value and allow higher current density in smaller packages. This makes them suitable for space-saving and high-efficiency requirements in applications.
Split-Gate Advantages
- Increases BVDSS
- Higher N-doping in the drift region minimizes RDS(on)
- Decreases QGD that reduces Miller charge coupling
- Improved FOM reduces switching and conduction losses
- Current SGT portfolio offering ranges from 30 V to 150 V rating and 1.5 mΩ lowest RDS(on) value in common packages
Features and Benefits
- Wide range of LV MOSFET portfolio
- Low RSP value (specific on-state resistance)
- High efficiency
- High quality
- Fast delivery
Split-Gate Technology MOSFET's
| Obrázek | Objednací číslo výrobce | Popis | Available Quantity | Cena | Zobrazit podrobnosti | |
|---|---|---|---|---|---|---|
 |  | MCAC80N10Y-TP | MOSFET N-CH 100 80A DFN5060 | 18765 - Immediate | $57.26 | Zobrazit podrobnosti |
| | MCAC30N06Y-TP | MOSFET N-CH 60 30A DFN5060 | 0 - Immediate | $24.63 | Zobrazit podrobnosti |
| | MCAC50N10Y-TP | MOSFET N-CH 100 50A DFN5060 | 7370 - Immediate | $51.78 | Zobrazit podrobnosti |
|  | MCU60P06-TP | MOSFET P-CH 60V 60A DPAK | 13997 - Immediate | $67.36 | Zobrazit podrobnosti |
Published: 2020-05-22
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