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GaN FETs in PQFN Packages
EPC GaN FETs deliver exceptional performance in compact footprints ideal for high-density power conversion
Gallium Nitride (GaN) FETs in PQFN packages from EPC deliver exceptional performance in compact footprints ideal for high-density power conversion. These devices offer ultra-low on-resistance, low gate charge, and minimal switching losses, enabling higher efficiency and faster switching speeds than traditional silicon MOSFETs.
With voltage ratings up to 200 V and pulsed current capabilities exceeding 400 A in some parts, these GaN FETs are perfect for demanding applications such as motor drives, robotics, and high-performance computing.
Features
- Cost-effective
- Higher performance than a MOSFET
- Faster
- Smaller
- Higher current
- Ease of use
- Footprint compatibility maximizes design flexibility
- Excellent thermal
- Exposed top
- Ultra-low thermal resistance
Applications
- AC/DC chargers
- High-frequency DC/DC converters
- Motor drives
- Solar MPPT
- Class-D audio
GaN FETs in PQFN Packages
| Obrázek | Objednací číslo výrobce | Popis | Typ tranzistoru FET | Technologie | Napětí mezi odtokem a zdrojem (Vdss) | Available Quantity | Cena | Zobrazit podrobnosti | |
|---|---|---|---|---|---|---|---|---|---|
 |  | EPC2367 | TRANS GAN 100V DIE,1.5 MOHM, 5PI | N-kanál | GaNFET (Galium nitrid) | 100 V | 0 - Immediate | $143.52 | Zobrazit podrobnosti |
|  | EPC2302 | TRANS GAN 100V DIE .0018OHM | N-kanál | GaNFET (Galium nitrid) | 100 V | 80656 - Immediate | $167.06 | Zobrazit podrobnosti |
|  | EPC2304 | TRANS GAN 200V .005OHM 7QFN | N-kanál | GaNFET (Galium nitrid) | 200 V | 0 - Immediate | $176.01 | Zobrazit podrobnosti |
|  | EPC2305 | TRANS GAN 150V .0022OHM 3X5 7QFN | N-kanál | GaNFET (Galium nitrid) | 150 V | 18743 - Immediate | $171.64 | Zobrazit podrobnosti |
|  | EPC2306 | TRANS GAN 100V .0038OHM 3X5PQFN | N-kanál | GaNFET (Galium nitrid) | 100 V | 25781 - Immediate | $106.02 | Zobrazit podrobnosti |
|  | EPC2307 | TRANS GAN 200V .010OHM 7QFN | N-kanál | GaNFET (Galium nitrid) | 200 V | 5749 - Immediate | $106.02 | Zobrazit podrobnosti |
|  | EPC2308 | TRANS GAN 150V .006OHM 7QFN | N-kanál | GaNFET (Galium nitrid) | 150 V | 9044 - Immediate | $108.73 | Zobrazit podrobnosti |
Evaluation Boards
| Obrázek | Objednací číslo výrobce | Popis | Available Quantity | Cena | Zobrazit podrobnosti | |
|---|---|---|---|---|---|---|
|  | EPC90140 | EVAL BOARD FOR EPC2304 | 67 - Immediate | $4,117.47 | Zobrazit podrobnosti |
|  | EPC90143 | EVAL BOARD FOR EPC2305 | 24 - Immediate | $4,117.47 | Zobrazit podrobnosti |
|  | EPC90145 | EVAL BOARD FOR EPC2306 | 5 - Immediate | $4,166.00 | Zobrazit podrobnosti |
|  | EPC90150 | EVAL BOARD FOR EPC2307 | 41 - Immediate | $4,117.47 | Zobrazit podrobnosti |
|  | EPC90148 | EVAL BOARD FOR EPC2308 | 32 - Immediate | $4,117.47 | Zobrazit podrobnosti |
|  | EPC90133 | EVAL BOARD FOR EPC2302 | 9 - Immediate | $4,117.47 | Zobrazit podrobnosti |
|  | EPC90164 | BD DEMO 1/2 BRIDGE 100V EPC2367 | 17 - Immediate | $4,117.47 | Zobrazit podrobnosti |
Published: 2025-04-10
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