Surface-Mount GaN N-Channel Power FET
Central Semiconductor FETs are designed for high-frequency applications with high efficiency standards
Combining high voltage capability with low RDS(ON), Central Semiconductor N-channel GaN FETs are designed for high-frequency applications with high standards of efficiency. These GaN FETs are offered in 100 V supporting 60 A or 650 V supporting 11 A or 17 A. They are provided in a variety of low-profile surface-mount packages..
- High voltage capability: 700 V
- Low gate charge and RDS(ON) as low as 3.2 mΩ
- Efficient fast switching
- Space-saving DFN and CSP
- Alternative energy inverters
- Battery management systems (BMS)
- High-efficiency power supplies
- Electric vehicle charging
Surface-Mount GaN N-Channel Power FET
Obrázek | Objednací číslo výrobce | Popis | Typ tranzistoru FET | Technologie | Napětí mezi odtokem a zdrojem (Vdss) | Available Quantity | Cena | Zobrazit podrobnosti | |
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![]() | ![]() | CCSPG1510N TR PBFREE | SURFACE MOUNT MOSFET | N-kanál | GaNFET (Galium nitrid) | 150 V | 2485 - Immediate | $209.97 | Zobrazit podrobnosti |