ROHM Semiconductor

SiC Power MOSFETs

ROHM’s SiC MOSFETs feature low ON resistance and low switching loss

Image of ROHM Semiconductor's SiC Power MOSFETsROHM’s silicon carbide (SiC) MOSFETs are available in a range of current ratings and packages. They come in a variety of ON resistances and voltage (VDSS) ratings of 650 V, 1,200 V, or 1,700 V. Unlike IGBTs there is no tail current during turn-off resulting in faster operation and reduced switching loss. Also, unlike silicon devices, the ON resistance remains relatively constant even at high temperatures, minimizing conduction losses. Bare dies up to 1,700 V are also available.

Features
  • Fast switching with low loss
  • Maximum junction temperature: +175°C
  • Packaged devices rated at 650 V, 1,200 V, or 1,700 V
  • ON resistance from 17 mΩ to 1,150 mΩ
  • Spice model and thermal model available
  • 3rd gen trench technology with low input capacitance (CISS) and low gate charge (QG)
  • DC blocking voltage: 650 V, 1,200 V, 1,700 V
  • Minimal switching losses
  • Operating temperature range: -40°C to +175°C
Applications
  • Inverters for induction heating
  • Motor drive inverters
  • Bidirectional converters
  • Solar inverters
  • Power conditioners

SiC Power MOSFETs Single

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
SICFET N-CH 1200V 40A TO247SCH2080KECSICFET N-CH 1200V 40A TO2470 - ImmediateSee Page for PricingView Details
SICFET N-CH 1200V 40A TO247SCT2080KECSICFET N-CH 1200V 40A TO2470 - Immediate$307.59View Details
SICFET N-CH 1200V 22A TO247SCT2160KECSICFET N-CH 1200V 22A TO2470 - Immediate$174.19View Details
SICFET N-CH 1200V 204A MODULEBSM180C12P2E202SICFET N-CH 1200V 204A MODULE0 - Immediate$12,875.86View Details
SICFET N-CH 1700V 5.9A TO268SCT2750NYTBSICFET N-CH 1700V 5.9A TO2680 - Immediate$73.57View Details

SiC Power MOSFETs Arrays

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
MOSFET 2N-CH 1200V 80A MODULEBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE9 - Immediate$6,709.48View Details
MOSFET 2N-CH 1200V 120A MODULEBSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE2 - Immediate$7,741.56View Details
MOSFET 2N-CH 1200V 204A MODULEBSM180D12P2C101MOSFET 2N-CH 1200V 204A MODULE1 - Immediate$9,405.14View Details
MOSFET 2N-CH 1200V 180A MODULEBSM180D12P3C007MOSFET 2N-CH 1200V 180A MODULE13 - Immediate$11,856.62View Details
Updated: 2019-11-01
Published: 2019-04-30

Related Videos

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

Publish Date: 2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

ROHM's SiC Power and Gate Driver Solutions
ROHM's SiC Power and Gate Driver Solutions

Publish Date: 2023-02-06

Related Product Highlight

4th Generation Silicon Carbide SiC MOSFETs ROHM's 4th generation silicon carbide MOSFETs are designed to deliver unparalleled efficiency and performance in demanding applications.
Industrial Power Solutions ROHM’s reliable portfolio of power solutions includes a variety of applications within the industrial sector from SiC MOSFETs and gate drivers to IPMs and shunt resistors. Learn more at DigiKey today.
SiC Schottky Barrier Diodes ROHM’s SiC Schottky barrier diodes are AEC-Q101 qualified for automotive use.

Related Articles and Blogs

How to Reduce Losses, Improve Efficiency, and Extend Temperature Range in High-Power Applications Designers can use 4th generation SiC MOSFETs to greatly improve efficiency, lower the cost, and reduce the size of high-voltage, high-power control circuits.
Wide Bandgap Semiconductors Are Reshaping the Transportation World The entire transportation sector is undergoing a radical transformation with solutions for electric and hybrid cars and cleaner mass transportation.
Wide Band Gap Semiconductors in Aerospace and Satellite Applications Wide Band Gap semiconductors bring several advantages in power conversion, such as increased power density and efficiency, and reducing system size and weight.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
SiC Trench MOSFETs Minimal reverse recovery behavior of the parasitic diode and supports high-speed switching.