Name: GCMX008C120S1-E1
Brand: SemiQ
SKU: 1560-GCMX008C120S1-E1-ND
Price: 836.5698 CZK
Availability: OutOfStock

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GCMX008C120S1-E1
DigiKey Part Number	1560-GCMX008C120S1-E1-ND
Manufacturer	SemiQ
Manufacturer Product Number	GCMX008C120S1-E1
Description	GEN3 1200V 8M SIC MOSFET MODULE,
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 188A (Tc) 536W (Tc) Chassis Mount SOT-227
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	SemiQ
Series	QSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	188A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	12mOhm @ 100A, 18V
Vgs(th) (Max) @ Id	4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs	506 nC @ 18 V
Vgs (Max)	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds	14067 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	536W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC