Name: SIHG24N65EF-GE3
Brand: Vishay Siliconix
SKU: SIHG24N65EF-GE3-ND
Price: 173.4535 CZK
Availability: OutOfStock

SIHG24N65EF-GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Similar

onsemi

In Stock: 186

Unit Price: 89,88000 Kč

Similar

Infineon Technologies

In Stock: 232

Unit Price: 109,44000 Kč

Similar

IXYS

In Stock: 5 065

Unit Price: 160,83000 Kč

Similar

IXYS

In Stock: 0

Unit Price: 96,37333 Kč

Similar

IXYS

In Stock: 0

Unit Price: 73,85433 Kč

Similar

Rohm Semiconductor

In Stock: 0

Unit Price: 0,00000 Kč

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHG24N65EF-GE3
DigiKey Part Number	SIHG24N65EF-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHG24N65EF-GE3
Description	MOSFET N-CH 650V 24A TO247AC
Manufacturer Standard Lead Time	25 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 24A (Tc) 250W (Tc) Through Hole TO-247AC
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2774 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Base Product Number	SIHG24