Name: IPN80R2K4P7ATMA1
Brand: Infineon Technologies
SKU: IPN80R2K4P7ATMA1TR-ND
Price: 38.1029 CZK
Availability: InStock

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IPN80R2K4P7ATMA1
DigiKey Part Number	IPN80R2K4P7ATMA1TR-ND - Tape & Reel (TR) IPN80R2K4P7ATMA1CT-ND - Cut Tape (CT) IPN80R2K4P7ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPN80R2K4P7ATMA1
Description	MOSFET N-CH 800V 2.5A SOT223
Manufacturer Standard Lead Time	48 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 2.5A (Tc) 6.3W (Tc) Surface Mount PG-SOT223
Datasheet	Datasheet
EDA/CAD Models	IPN80R2K4P7ATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 40µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
Series CoolMOS™ P7	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 500 V
Part Status Active	Power Dissipation (Max) 6.3W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package PG-SOT223
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)	Package / Case TO-261-4, TO-261AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPN80R2
Rds On (Max) @ Id, Vgs 2.4Ohm @ 800mA, 10V

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