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IMW65R007M2HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMW65R007M2HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMW65R007M2HXKSA1 |
Description | SILICON CARBIDE MOSFET |
Manufacturer Standard Lead Time | 61 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 171A (Tc) 625W (Tc) Through Hole PG-TO247-3-U06 |
Datasheet | Datasheet |
EDA/CAD Models | IMW65R007M2HXKSA1 Models |
Product Attributes
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Category | Rds On (Max) @ Id, Vgs 6.1mOhm @ 146.3A, 20V |
Mfr | Vgs(th) (Max) @ Id 5.6V @ 29.7mA |
Series | Gate Charge (Qg) (Max) @ Vgs 179 nC @ 18 V |
Packaging Tube | Vgs (Max) +23V, -7V |
Part Status Active | Input Capacitance (Ciss) (Max) @ Vds 6359 pF @ 400 V |
FET Type | Power Dissipation (Max) 625W (Tc) |
Technology | Operating Temperature -55°C ~ 175°C (TJ) |
Drain to Source Voltage (Vdss) 650 V | Mounting Type Through Hole |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package PG-TO247-3-U06 |
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V | Package / Case |
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Quantity
All prices are in CZK
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | 750,89000 Kč | 750,89 Kč |
| 30 | 487,00667 Kč | 14 610,20 Kč |
| 120 | 429,34433 Kč | 51 521,32 Kč |
| 510 | 387,17100 Kč | 197 457,21 Kč |
| Unit Price without VAT: | 750,89000 Kč |
|---|---|
| Unit Price with VAT: | 908,57690 Kč |
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