Name: IPD65R660CFDAATMA1
Brand: Infineon Technologies
SKU: 448-IPD65R660CFDAATMA1TR-ND
Price: 61.4922 CZK
Availability: InStock

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IPD65R660CFDAATMA1
DigiKey Part Number	448-IPD65R660CFDAATMA1TR-ND - Tape & Reel (TR) 448-IPD65R660CFDAATMA1CT-ND - Cut Tape (CT) 448-IPD65R660CFDAATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD65R660CFDAATMA1
Description	MOSFET N-CH 650V 6A TO252-3
Manufacturer Standard Lead Time	29 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet
EDA/CAD Models	IPD65R660CFDAATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±20V
Series CoolMOS™	Input Capacitance (Ciss) (Max) @ Vds 543 pF @ 100 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 62.5W (Tc)
Part Status Active	Operating Temperature -40°C ~ 150°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 650 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 6A (Tc)	Supplier Device Package PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs 660mOhm @ 3.22A, 10V	Base Product Number IPD65R660
Vgs(th) (Max) @ Id 4.5V @ 214.55µA