Name: IPB029N06N3GE8187ATMA1
Brand: Infineon Technologies
SKU: 448-IPB029N06N3GE8187ATMA1TR-ND
Price: 84.6032 CZK
Availability: OutOfStock

N-Channel 60 V 120A (Tc) 188W (Tc) Surface Mount PG-TO263-3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPB029N06N3GE8187ATMA1
DigiKey Part Number	448-IPB029N06N3GE8187ATMA1TR-ND - Tape & Reel (TR) 448-IPB029N06N3GE8187ATMA1CT-ND - Cut Tape (CT) 448-IPB029N06N3GE8187ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB029N06N3GE8187ATMA1
Description	MOSFET N-CH 60V 120A D2PAK
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 120A (Tc) 188W (Tc) Surface Mount PG-TO263-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	188W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	IPB029