IPW65R099CFD7AXKSA1
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IMW65R048M1HXKSA1

DigiKey Part Number
448-IMW65R048M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R048M1HXKSA1
Description
MOSFET 650V NCH SIC TRENCH
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IMW65R048M1HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id
5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1118 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
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In-Stock: 736
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All prices are in CZK
Tube
QuantityUnit PriceExt Price
1186,22000 Kč186,22 Kč
30107,01067 Kč3 210,32 Kč
12092,49042 Kč11 098,85 Kč
51086,03035 Kč43 875,48 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:186,22000 Kč
Unit Price with VAT:225,32620 Kč