Name: SQJ479EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ479EP-T1_GE3TR-ND
Price: 48.0249 CZK
Availability: OutOfStock

SQJ479EP-T1_GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Direct

Vishay Siliconix

In Stock: 5 197

Unit Price: 39,69000 Kč

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SQJ479EP-T1_GE3
DigiKey Part Number	SQJ479EP-T1_GE3TR-ND - Tape & Reel (TR) SQJ479EP-T1_GE3CT-ND - Cut Tape (CT) SQJ479EP-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQJ479EP-T1_GE3
Description	MOSFET P-CH 80V 32A PPAK SO-8
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	P-Channel 80 V 32A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
EDA/CAD Models	SQJ479EP-T1_GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SQJ479