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N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP21N80AE-GE3

DigiKey Part Number
SIHP21N80AE-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP21N80AE-GE3
Description
MOSFET N-CH 800V 17.4A TO220AB
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1388 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
Product Questions and Answers

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All prices are in CZK
Tube
QuantityUnit PriceExt Price
1110,24000 Kč110,24 Kč
5057,46320 Kč2 873,16 Kč
10052,37110 Kč5 237,11 Kč
50043,45242 Kč21 726,21 Kč
1 00040,99860 Kč40 998,60 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:110,24000 Kč
Unit Price with VAT:133,39040 Kč