N-Channel 800 V 17A (Ta) 180W (Tc) Through Hole TO-220
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TK17E80W,S1X

DigiKey Part Number
TK17E80WS1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK17E80W,S1X
Description
MOSFET N-CHANNEL 800V 17A TO220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 17A (Ta) 180W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
TK17E80W,S1X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK17E80
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In-Stock: 94
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1131,35000 Kč131,35 Kč
5069,84820 Kč3 492,41 Kč
10063,90990 Kč6 390,99 Kč
50054,01936 Kč27 009,68 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:131,35000 Kč
Unit Price with VAT:158,93350 Kč