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N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-247AC
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHG35N60E-GE3

DigiKey Part Number
SIHG35N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHG35N60E-GE3
Description
MOSFET N-CH 600V 32A TO247AC
Manufacturer Standard Lead Time
25 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-247AC
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
E
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
132 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2760 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG35
Product Questions and Answers

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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1152,19000 Kč152,19 Kč
10102,85000 Kč1 028,50 Kč
10074,98220 Kč7 498,22 Kč
50063,10832 Kč31 554,16 Kč
1 00063,04475 Kč63 044,75 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:152,19000 Kč
Unit Price with VAT:184,14990 Kč