Name: SIHB12N60E-GE3
Brand: Vishay Siliconix
SKU: SIHB12N60E-GE3-ND
Price: 76.472 CZK
Availability: OutOfStock

SIHB12N60E-GE3
DigiKey Part Number	SIHB12N60E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB12N60E-GE3
Description	MOSFET N-CH 600V 12A D2PAK
Manufacturer Standard Lead Time	15 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 12A (Tc) 147W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	937 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	147W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	SIHB12

Unit Price without VAT:	63,20000 Kč
Unit Price with VAT:	76,47200 Kč

SIHB12N60E-GE3