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N-Channel 650 V 17.3A (Ta) 165W (Tc) Through Hole TO-247
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK17N65W,S1F

DigiKey Part Number
TK17N65WS1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK17N65W,S1F
Description
MOSFET N-CH 650V 17.3A TO247
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 17.3A (Ta) 165W (Tc) Through Hole TO-247
Datasheet
 Datasheet
EDA/CAD Models
TK17N65W,S1F Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK17N65
Product Questions and Answers

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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1115,35000 Kč115,35 Kč
3065,10767 Kč1 953,23 Kč
12054,04408 Kč6 485,29 Kč
51045,93565 Kč23 427,18 Kč
1 02045,38917 Kč46 296,95 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:115,35000 Kč
Unit Price with VAT:139,57350 Kč