Name: IPW65R099C6FKSA1
Brand: Infineon Technologies
SKU: IPW65R099C6FKSA1-ND
Price: 182.7705 CZK
Availability: OutOfStock

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IPW65R099C6FKSA1
DigiKey Part Number	IPW65R099C6FKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPW65R099C6FKSA1
Description	MOSFET N-CH 650V 38A TO247-3
Customer Reference
Detailed Description	N-Channel 650 V 38A (Tc) 278W (Tc) Through Hole PG-TO247-3-1
Datasheet	Datasheet
EDA/CAD Models	IPW65R099C6FKSA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	127 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-1
Package / Case	TO-247-3
Base Product Number	IPW65R099

Unit Price without VAT:	151,05000 Kč
Unit Price with VAT:	182,77050 Kč

IPW65R099C6FKSA1