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IPB60R190P6ATMA1 is Obsolete and no longer manufactured.
Available Substitutes:
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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB60R190P6ATMA1 | |
|---|---|
DigiKey Part Number | IPB60R190P6ATMA1TR-ND - Tape & Reel (TR) |
Manufacturer | |
Manufacturer Product Number | IPB60R190P6ATMA1 |
Description | MOSFET N-CH 600V 20.2A D2PAK |
Customer Reference | |
Detailed Description | N-Channel 600 V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3 |
Datasheet | Datasheet |
Product Attributes
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Category | Vgs(th) (Max) @ Id 4.5V @ 630µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V |
Series | Vgs (Max) ±20V |
Packaging Tape & Reel (TR) | Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 100 V |
Part Status Obsolete | Power Dissipation (Max) 151W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Surface Mount |
Drain to Source Voltage (Vdss) 600 V | Supplier Device Package PG-TO263-3 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V |
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Substitutes (7)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IPB60R180P7ATMA1 | Infineon Technologies | 4 812 | IPB60R180P7ATMA1CT-ND | 76,43000 Kč | Similar |
| R6024ENJTL | Rohm Semiconductor | 811 | R6024ENJTLCT-ND | 106,88000 Kč | Similar |
| SIHB22N60E-GE3 | Vishay Siliconix | 0 | SIHB22N60E-GE3-ND | 105,83000 Kč | Similar |
| SIHB22N60EL-GE3 | Vishay Siliconix | 0 | SIHB22N60EL-GE3-ND | 51,73907 Kč | Similar |
| SIHB23N60E-GE3 | Vishay Siliconix | 44 | SIHB23N60E-GE3-ND | 109,19000 Kč | Similar |
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Obsolete
