N-Channel 1200 V 8.1A (Tc) 80W (Tc) Surface Mount PG-TO263-7-12
cms-photo-disclaimer
N-Channel 1200 V 8.1A (Tc) 80W (Tc) Surface Mount PG-TO263-7-12
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMBG120R234M2HXTMA1

cms-digikey-product-number
448-IMBG120R234M2HXTMA1TR-ND - Tape & Reel (TR)
448-IMBG120R234M2HXTMA1CT-ND - Cut Tape (CT)
448-IMBG120R234M2HXTMA1DKR-ND - Digi-Reel®
cms-manufacturer
cms-manufacturer-product-number
IMBG120R234M2HXTMA1
cms-description
SICFET N-CH 1200V 8.1A TO263
cms-standard-lead-time
45 Weeks
cms-customer-reference
cms-detailed-description
N-Channel 1200 V 8.1A (Tc) 80W (Tc) Surface Mount PG-TO263-7-12
Datasheet
 Datasheet
cms-product-attributes
cms-type
cms-description
cms-select-all
cms-category
Mfr
Series
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
233.9mOhm @ 3A, 18V
Vgs(th) (Max) @ Id
5.1V @ 900µA
Gate Charge (Qg) (Max) @ Vgs
7.9 nC @ 18 V
Vgs (Max)
+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-12
Package / Case
Base Product Number
cms-product-q-and-a

cms-techforum-default-desc

In-Stock: 1 081
cms-incoming-leadtime-link
cms-all-prices-in-currency
Cut Tape (CT) & Digi-Reel®
cms-quantityUnit Pricecms-ext-price
1109,61000 Kč109,61 Kč
1072,67400 Kč726,74 Kč
10051,74120 Kč5 174,12 Kč
50046,08306 Kč23 041,53 Kč
* All Digi-Reel orders will add a 167,00 Kč reeling fee.
Tape & Reel (TR)
cms-quantityUnit Pricecms-ext-price
1 00037,67776 Kč37 677,76 Kč
2 00037,64942 Kč75 298,84 Kč
cms-manufacturer-standard-package
Unit Price without VAT:109,61000 Kč
Unit Price with VAT:132,62810 Kč