Name: AIMBG120R020M1XTMA1
Brand: Infineon Technologies
SKU: 448-AIMBG120R020M1XTMA1TR-ND
Price: 484.5203 CZK
Availability: InStock

N-Channel 1200 V 104A (Tc) 468W (Tc) Surface Mount PG-TO263-7-12

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AIMBG120R020M1XTMA1
DigiKey Part Number	448-AIMBG120R020M1XTMA1TR-ND - Tape & Reel (TR) 448-AIMBG120R020M1XTMA1CT-ND - Cut Tape (CT) 448-AIMBG120R020M1XTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	AIMBG120R020M1XTMA1
Description	SICFET N-CH 1200V 104A TO-263
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 104A (Tc) 468W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet
EDA/CAD Models	AIMBG120R020M1XTMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Rds On (Max) @ Id, Vgs	25mOhm @ 43A, 20V
Vgs(th) (Max) @ Id	5.1V @ 15mA
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 20 V
Vgs (Max)	+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds	2667 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	468W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number	AIMBG120