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Designs (52)

52 Results - Page 1/6 |< < 1 2 3 4 5 > >|

EPC9051: 1A, 0 ~ 40V, 15MHz, Class E Amplifier

Manufacturer: EPC

The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz.

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EPC9066: 2.7A, 0 ~ 40V, Half H-Bridge

Manufacturer: EPC

The EPC9066 development board is a 40 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives

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EPC9060: 25A, 0 ~ 40V, Half H-Bridge Driver

Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2030/31/32 eGaN® field effect transistors

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EPC9054: 1A, Wireless Power Amp, 0 ~ 40V, ~ 60V, ~ 80V

Manufacturer: EPC

The EPC9054 is a high efficiency, differential mode Class-E amplifier development board that can operate up to 15 MHz.

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EPC9001: 15A @ 0 ~ 40V, Half Bridge

Manufacturer: EPC

The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives

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EPC9080: 30A, 0 ~ 100V, Half H-Bridge

Manufacturer: EPC

The EPC9080 development board is a 100 V maximum device voltage,30 A maximum output current, half bridge with onboard gate drives

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EPC9013: 35A, 100V, Half Bridge

Manufacturer: EPC

The EPC9013 development board features the 100 VEPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum

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EPC9014: 4A, 0 ~ 200V, Half H-Bridge

Manufacturer: EPC

The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019

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EPC9018: 35A, 0 ~ 30V, H-Bridge

Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).

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EVALPWD13F60: 8A, 0 ~ 600V, H-Bridge Driver

Manufacturer: STMicroelectronics

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage.

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52 Results - Page 1/6 |< < 1 2 3 4 5 > >|