Name: SIHD2N80AE-GE3
Brand: Vishay Siliconix
SKU: 742-SIHD2N80AE-GE3-ND
Price: 47.4441 CZK
Availability: InStock

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SIHD2N80AE-GE3
DigiKey Part Number	742-SIHD2N80AE-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHD2N80AE-GE3
Description	MOSFET N-CH 800V 2.9A DPAK
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 2.9A (Tc) 62.5W (Tc) Surface Mount TO-252AA
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 100 V
Part Status Active	Power Dissipation (Max) 62.5W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package TO-252AA
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHD2
Rds On (Max) @ Id, Vgs 2.9Ohm @ 500mA, 10V

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Unit Price without VAT:	39,21000 Kč
Unit Price with VAT:	47,44410 Kč

SIHD2N80AE-GE3