N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
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IRF640PBF

DigiKey Part Number
IRF640PBF-ND
Manufacturer
Manufacturer Product Number
IRF640PBF
Description
MOSFET N-CH 200V 18A TO220AB
Manufacturer Standard Lead Time
39 Weeks
Customer Reference
Detailed Description
N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRF640PBF Models
Product Attributes
Type
Description
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Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
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In-Stock: 2 232
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Tube
QuantityUnit PriceExt Price
173,28000 Kč73,28 Kč
5036,83040 Kč1 841,52 Kč
10033,30490 Kč3 330,49 Kč
50027,12522 Kč13 562,61 Kč
1 00025,13986 Kč25 139,86 Kč
2 00023,59651 Kč47 193,02 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:73,28000 Kč
Unit Price with VAT:88,66880 Kč