Name: TK2R9E10PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK2R9E10PL,S1X-ND
Price: 114.587 CZK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK2R9E10PL,S1X
DigiKey Part Number	264-TK2R9E10PL,S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK2R9E10PL,S1X
Description	PB-F POWER MOSFET TRANSISTOR TO-
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 100A (Ta) 306W (Tc) Through Hole TO-220
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	161 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9500 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	306W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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Tube