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TO-247-4
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GP3T040A120H

DigiKey Part Number
1560-GP3T040A120H-ND
Manufacturer
SemiQ
Manufacturer Product Number
GP3T040A120H
Description
GEN3 1200V, 40M SIC MOSFET, TO-2
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 62A (Tc) 246W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SemiQ
Series
QSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
52mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
2803 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
246W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 98
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1163,31000 Kč163,31 Kč
10110,92000 Kč1 109,20 Kč
10081,27030 Kč8 127,03 Kč
50069,52012 Kč34 760,06 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:163,31000 Kč
Unit Price with VAT:197,60510 Kč
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