N-Channel 650 V 21A (Ta) 107W (Ta) Through Hole TO-247-3L
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N-Channel 650 V 21A (Ta) 107W (Ta) Through Hole TO-247-3L
Nexperia cascode GaN FETs

GAN111-650WSBQ

DigiKey Part Number
1727-GAN111-650WSBQ-ND
Manufacturer
Manufacturer Product Number
GAN111-650WSBQ
Description
GAN111-650WSB/SOT429/TO-247
Customer Reference
Detailed Description
N-Channel 650 V 21A (Ta) 107W (Ta) Through Hole TO-247-3L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
114mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4.9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
336 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
107W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3L
Package / Case
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In-Stock: 309
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Tube
QuantityUnit PriceExt Price
1249,04000 Kč249,04 Kč
10172,41500 Kč1 724,15 Kč
300115,75567 Kč34 726,70 Kč
600110,60697 Kč66 364,18 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:249,04000 Kč
Unit Price with VAT:301,33840 Kč