IXYX110N120A4
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IXFH80N65X2

DigiKey Part Number
238-IXFH80N65X2-ND
Manufacturer
IXYS
Manufacturer Product Number
IXFH80N65X2
Description
MOSFET N-CH 650V 80A TO247
Manufacturer Standard Lead Time
34 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 80A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
HiPerFET™, Ultra X2
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
8245 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
890W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXFH80
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In-Stock: 5 318
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1326,24000 Kč326,24 Kč
30200,61133 Kč6 018,34 Kč
120173,11458 Kč20 773,75 Kč
510171,93018 Kč87 684,39 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:326,24000 Kč
Unit Price with VAT:394,75040 Kč