IXYX110N120A4
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IXTH80N65X2

DigiKey Part Number
IXTH80N65X2-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTH80N65X2
Description
MOSFET N-CH 650V 80A TO247
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 80A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Ultra X2
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
144 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
7753 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
890W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXTH80
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In-Stock: 119
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1323,12000 Kč323,12 Kč
30198,33300 Kč5 949,99 Kč
120171,01550 Kč20 521,86 Kč
510169,24447 Kč86 314,68 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:323,12000 Kč
Unit Price with VAT:390,97520 Kč