448~P/PG-TO247-4-17~~4
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
448~P/PG-TO247-4-17~~4
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R040M2HXKSA1

DigiKey Part Number
448-IMZC120R040M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZC120R040M2HXKSA1
Description
SICFET N-CH 1200V 48A TO247
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 48A (Tc) 218W (Tc) Through Hole PG-TO247-4-17
Datasheet
 Datasheet
EDA/CAD Models
IMZC120R040M2HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
40mOhm @ 18A, 18V
Vgs(th) (Max) @ Id
5.1V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1310 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
218W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-17
Package / Case
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 213
Check for Additional Incoming Stock
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1223,76000 Kč223,76 Kč
30133,42900 Kč4 002,87 Kč
120113,61208 Kč13 633,45 Kč
510109,22845 Kč55 706,51 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:223,76000 Kč
Unit Price with VAT:270,74960 Kč