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IPW65R099CFD7AXKSA1
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IMW120R090M1HXKSA1

DigiKey Part Number
IMW120R090M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW120R090M1HXKSA1
Description
SICFET N-CH 1.2KV 26A TO247-3
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IMW120R090M1HXKSA1 cms-models
Product Attributes
Type
Description
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Category
Mfr
Series
cms-packaging
Tube
cms-part-status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
707 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
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QuantityUnit PriceExt Price
1171,64000 Kč171,64 Kč
3095,22767 Kč2 856,83 Kč
12084,44308 Kč10 133,17 Kč
51079,48278 Kč40 536,22 Kč
Manufacturers Standard Package
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cms-vat-exclude-title:171,64000 Kč
cms-vat-include-title:207,68440 Kč