Name: AIMZH120R020M1TXKSA1
Brand: Infineon Technologies
SKU: 448-AIMZH120R020M1TXKSA1-ND
Price: 636.1817 CZK
Availability: InStock

N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole PG-TO247-4-11

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AIMZH120R020M1TXKSA1
DigiKey Part Number	448-AIMZH120R020M1TXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	AIMZH120R020M1TXKSA1
Description	SIC_DISCRETE
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole PG-TO247-4-11
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 82 nC @ 20 V
Mfr Infineon Technologies	Vgs (Max) +23V, -5V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 2667 pF @ 800 V
Part Status Active	Power Dissipation (Max) 429W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Grade Automotive
Drain to Source Voltage (Vdss) 1200 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 100A (Tc)	Mounting Type Through Hole
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V	Supplier Device Package PG-TO247-4-11
Rds On (Max) @ Id, Vgs 25mOhm @ 43A, 20V	Package / Case TO-247-4
Vgs(th) (Max) @ Id 5.1V @ 13.7mA